Arm3055l datasheet на русском

APM3055L MOSFET – описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: APM3055L

Тип транзистора: MOSFET

Максимальная рассеиваемая мощность (Pd): 50 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 15 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 17 ns

Сопротивление сток-исток открытого транзистора (Rds): 0.1 Ohm

Тип корпуса: TO252_SOT223

APM3055L Datasheet (PDF)

1.1. apm3055l.pdf Size:310K _anpec

APM3055L N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/12A, RDS(ON)=100mΩ(max) @ VGS=10V RDS(ON)=200mΩ(max) @ VGS=4.5V • Super High Dense Cell Design • • • • • High Power and Current Handling Capability • • • • 1 2 3 1 2 3 • TO-252 and SOT-223 Packages • • • • G D S G D S Applications Top View of TO-252 Top View

APM3095PU ® P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, D RDS(ON)=95mΩ (typ.) @ VGS=-10V S RDS(ON)=140mΩ (typ.) @ VGS=-4.5V G 100% UIS + Rg Tested Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available (RoHS Compliant) D ESD Protection Applications G • Power Management in Desktop Computer or DC/DC Converters.

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@ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Packages

Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Parameter
Maximum Drain Current ­ Continuous Maximum Drain Current ­ Pulsed

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.6 – Apr., 2002 1

Symbol PD Parameter Maximum Power Dissipation TA=100°C TJ TSTG Maximum Junction Temperature Storage Temperature Range TO-252 SOT-223

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Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VSD Dynamic Q gd tON td(ON) tr td(OFF) tf tOFF Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Time Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-off Time Diode Forward Voltage

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